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Simulation to Study the Effect of Variation of Oxide Thickness and Substrate Doping on DIBL in MOSFET

机译：仿真研究氧化物厚度和基板掺杂在MOSFET中掺杂掺杂的影响

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In this work, the Drain Induced Barrier Lowering is studied as the function of oxide thickness and substrate doping. The effects are verified simulating with TCAD Sentaurus toolkit. High-K dielectric material is used in place of SiO_2. Also investigation of the effect of change in substrate doping on Drain Induced Barrier Lowering is studied.

机译：在这项工作中，研究了漏极感应的屏障降低作为氧化物厚度和衬底掺杂的函数。使用TCAD Sentaurus Toolkit进行了验证的效果。使用高k介电材料代替SiO_2。还研究了对衬底掺杂变化对漏极引起的屏障降低的影响的研究。

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《CODEC 2012》|2012年||共4页
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作者
Subhradip Das; Sudakshina Kundu;
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中图分类 TP393-532;
关键词
Drain Induced Barrier Lowering; High- K dielectric; Substrate doping; TCAD Sentaurus; Simulation;

机译：漏极引起的屏障降低;高k电介质;衬底掺杂;TCAD SENTAURUS;模拟;

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1. Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs [J] . Sudhansu Kumar Pati, Kalyan Koley, Arka Dutta, Microelectronics & Reliability . 2014,第6a7期

机译：体和氧化物厚度变化对地下DG-MOSFET的模拟和RF性能的研究
2. Study on effect of back oxide thickness variation in FDSOI MOSFET on analogue circuit performance [J] . Sagar Mukherjee, Swarnil Roy, Arka Dutta, Circuits, Devices & Systems, IET . 2016,第6期

机译：FDSOI MOSFET中背氧化层厚度变化对模拟电路性能的影响研究
3. Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications [J] . A. Srivastava, Partha Sarkar, Chandan Kumar Sarkar Microelectronics reliability . 2009,第4期

机译：在沟道工程深亚微米n-MOSFET器件上研究混合信号应用中不同等效氧化物厚度的栅极介电常数变化
4. Simulation to study the effect of variation of oxide thickness and substrate doping on DIBL in MOSFET [C] . Das Subhradip, Kundu Sudakshina 2012 5th International Conference on Computers and Devices for Communication . 2012

机译：研究氧化物厚度和衬底掺杂变化对MOSFET中DIBL影响的仿真
5. A study of hafnium dioxide-based MOSCAPs and MOSFETs on III-V substrates with a thin germanium interfacial passivation layer [D] . Kim, Hyoung-Sub 2008

机译：对具有薄界面钝化层的III-V衬底上基于二氧化ha的MOSCAP和MOSFET的研究
6. Simulation Study of Surface Transfer Doping of Hydrogenated Diamond by MoO3 and V2O5 Metal Oxides [O] . Joseph McGhee, Vihar P. Georgiev 2020

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7. Effect of drift region doping and coulmn thickness variations in a super junction power MOSFET: a 2-D simulation study [O] . Sharma Deepti, Vaid Rakesh 2011

机译：超级结功率MOSFET中漂移区掺杂和列厚度变化的影响：二维仿真研究
8. Infrared Response of Impurity Doped Silicon MOSFET's (IRFET's):Fabrication and Characterization of the Gallium Doped Infrared Sensing MOSFET. [R] . forbes,leonard 1976

机译：杂质掺杂硅mOsFET（IRFET）的红外响应：镓掺杂红外传感mOsFET的制备和表征。

Simulation to Study the Effect of Variation of Oxide Thickness and Substrate Doping on DIBL in MOSFET

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