Photoelectrical and microphysical properties of Sol-Gel derived IGZO thin films for printed TFTs

摘要

We fabricated stack layer transparent conductive IGZO thin films for TFT device applications using a sol-gel method. This research focuses on the properties of the resulting thin films to evaluate the ability of solution methods to replace current ultra-high vacuum techniques to fabricate thin films and its used devices. In this paper, we describe our high quality solution deposited technique: developing a sol-gel process that produced TCO semiconductor layer films with surface roughness in the same order as that of films formed by ultra-high vacuum deposition. As a result, good electrical conductivity and optical transmittance were achieved. The results suggest that solution-based methods show promise as an alternative to ultra-high vacuum methods to produce TCO thin films.