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The Facet Passivation Characteristic of 940nm Semiconductor Laser

机译:940nm半导体激光器的面钝化特性

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A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology, semiconductor laser are cleaved in the air, and the surface oxide layer is removed with a low energy ion source, immediately flowed by coating the facet with 20nm of thin ZnSe passivation layer. The function of the passivation layer is to protect semiconductor laser facet, and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results of semiconductor laser output power show that output power with the coated ZnSe passivation layer method is 12% higher than coated Si passivation layer, and 36% higher than that coated oxidative optical film. The device coated oxidative optical film is failed when current is 4.1A, and the device coated with Si passivation layer is failed when current is 4.8A, the final failed of the device is coated ZnSe passivation layer. In conclusion, the method of coated ZnSe passivation layer on the semiconductor laser facet can effectively prevent the catastrophic optical mirror damage, and increase the output power of semiconductor lasers.
机译:通过研究半导体激光器的灾难性光学镜损伤机制来提出一种新型方面涂层技术。在该技术中,半导体激光器在空气中切割,并且用低能量离子源去除表面氧化物层,立即通过用20nm的薄ZnSe钝化层涂覆面部而流动。钝化层的功能是保护半导体激光刻面,并防止漫射到小刻的杂质颗粒。最后,方面涂有氧化光学膜。半导体激光输出功率的测试结果表明,具有涂覆的ZnSe钝化层方法的输出功率比涂覆的Si钝化层高12%,比涂覆的氧化光学膜高36%。当电流为4.1A时,器件涂覆的氧化光学膜失效,并且当电流为4.8A时,涂有SI钝化层的器件,器件的最终失败是涂覆ZNSE钝化层。总之,在半导体激光面上涂覆的ZnSe钝化层的方法可以有效地防止灾难性的光学镜损坏,并增加半导体激光器的输出功率。

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