Fabrication and Characterization of Transparent P-Type Zno Films Obtained by in Situ Oxidation of Sputtering Zn_3N_2 :Al

摘要

Nitrogen and Aluminum co-doped ZnO thin films were prepared by In Situ thermal oxidation of RF magnetron sputtered Zn_3N_2:Al films on quartz glasses. The structural, optical and electrical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance, photoluminescence (PL) and Hall effect measurements. XRD analyses revealed that Zn_3N_2:Al films entirely transformed into ZnO films after annealing in oxygen at 500 °C for one hour. Hall effect measurements confirmed p-type conduction in ZnO films with a low resistivity of 34.8Ω.cm, ahighhole concentration of 3.26 x 10~(17) cm~(-3) and a Hall mobility of 2.3 cm~2/Vs. Optical transmission spectra shows that the films are highly transparent in the visible region . Our results demonstrate a promising approach to fabricate low resistivity p-type ZnO.