首页> 外国专利> A HYBRID BEAM DEPOSITION SYSTEM AND METHODS FOR FABRICATING METAL OXIDE ZNO FILMS, P-TYPE ZNO FILMS, AND ZNO-BASED II-VI COMPOUND SEMICONDUCTOR DEVICES

A HYBRID BEAM DEPOSITION SYSTEM AND METHODS FOR FABRICATING METAL OXIDE ZNO FILMS, P-TYPE ZNO FILMS, AND ZNO-BASED II-VI COMPOUND SEMICONDUCTOR DEVICES

机译:用于制造金属氧化物ZNO膜,P型ZNO膜和基于ZNO的II-VI复合半导体器件的混合束沉积系统和方法

摘要

A hybrid beam deposition (HBD) system and methods according to the present invention utilizes a unique combination of pulsed laser deposition (PLD) technique and equipment with equipment and techniques that provide a radical oxygen rf-plasma stream to effectively increase the flux density of available reactive oxygen at a deposition substrate for the effective synthesis of metal oxide thin films. The HBD system and methods of the present invention further integrate molecular beam epitaxy (MBE) and/or chemical vapor deposition (CVD) techniques and equipment in combination with the PLD equipment and technique and the radical oxygen rf-plasma stream to provide elemental source materials for the synthesis of undoped and/or doped metal oxide thin films as well as the synthesis of undoped and/or doped metal-based oxide alloy thin films.
机译:根据本发明的混合束沉积(HBD)系统和方法利用脉冲激光沉积(PLD)技术和设备与提供自由基氧rf-等离子体流的设备和技术的独特组合,以有效地增加可用的通量密度。沉积基板上的活性氧,用于有效合成金属氧化物薄膜。本发明的HBD系统和方法进一步结合了分子束外延(MBE)和/或化学气相沉积(CVD)技术和设备以及PLD设备和技术以及自由基氧rf-等离子体流以提供元素源材料。用于合成未掺杂和/或掺杂的金属氧化物薄膜,以及用于合成未掺杂和/或掺杂的金属基氧化物合金薄膜。

著录项

  • 公开/公告号AU2003262981A1

    专利类型

  • 公开/公告日2004-03-19

    原文格式PDF

  • 申请/专利权人 MOXTRONICS INC.;

    申请/专利号AU20030262981

  • 发明设计人 TAE-SEOK LEE;YUNGRYEL RYU;HENRY W. WHITE;

    申请日2003-08-27

  • 分类号C23C14/00;

  • 国家 AU

  • 入库时间 2022-08-21 23:02:39

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