Study on the influence of the waveguide layer to the far field of GaN based laser diode

摘要

In this paper, the far field of GaN based laser diode is discussed by using numerical simulation method. Results show that, the divergence angle θ of far field increased with the thickness of the waveguide layer as exponential decay and the divergence angle 9// of far field increased with the thickness of the waveguide layer. The aspect ratio of far field distribution increased with increasing the thickness of the waveguide layer as exponential decay.