首页> 外文会议>International Conference on Materials and Products Manufacturing Technology >Effects of different sintering temperature on the Microstructure and Piezoelectric Properties of Pb(Nb_(2/3)Zn_(1/3)_x(Zr_(52)Ti_(48))_(1-x)O_3 Ceramics
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Effects of different sintering temperature on the Microstructure and Piezoelectric Properties of Pb(Nb_(2/3)Zn_(1/3)_x(Zr_(52)Ti_(48))_(1-x)O_3 Ceramics

机译:不同烧结温度对Pb微观结构和压电性能的影响(Nb_(2/3)Zn_(1/3)_x(Zr_(52)Ti_(48))_(1-x)O_3陶瓷

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In this paper, the effects of different sintering temperature on the microstructure and piezoelectric properties of Pb(Nb_(2/3)Zn_(1/3))_(0.03)(Zr_(52)Ti_(48)_(0.97)O_3(PNZZT) ceramic samples were investigated. The Pb(Nb_(2/3)Zn_(1/3)_(0.03)(Zr_(52)Ti_(48)_(0.97)O_3 ceramics materials was prepared by a conventional mixed oxide method. In the period of the experiment, the relationship between crystallographic phase and microstructure were analyzed by X-ray diffraction(XRD) and scanning electron microscopy(SEM) respectively. The XRD patterns shows that all of the ceramic samples are with a tetragonal perovskite structure. Along with sintering temperature increased and the x is 0.03, the grain size gradually become big. Through this experiment, it has been found that when the x is 0.03 and sintered at 1130°C for 2 h, the grains grow well, the grain-boundary intersection of the sample combined well and the porosity of the ceramics decreased, an excellent comprehensive electrical properties of the Pb(Nb_(2/3)Zn_(1/3))_(0.03)(Zr_(52)Ti_(48)_(0.97)O_3 samples can be obtained. Its best electrical properties are as follows: dielectric constant (ε) is 1105, dielectric loss(tg) is 0.017, electromechanical coupling coefficient (K_p) is 0.287, piezoelectric constant(d33) is 150PC/N.
机译:在本文中,不同烧结温度对Pb微观结构和压电性能的影响(Nb_(2/3)Zn_(1/3))_(0.03)(Zr_(52)Ti_(48)_(0.97)O_3 (PNZZT)陶瓷样品进行了研究。通过常规混合氧化物制备Pb(Nb_(2/3)Zn_(0.03)(0.03)(0.03)(Zr_(52)Ti_(48)_(0.97)O_3陶瓷材料分别方法。在实验期间,结晶相和微观结构之间的关系,通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析,其X射线衍射图案显示,所有的陶瓷样品的是具有四方钙钛矿结构,随着烧结温度升高,x为0.03时,晶粒尺寸逐渐变大,通过该实验中,已经发现的是,当x为0.03,并在1130℃下2小时烧结,晶粒生长良好,在样品的晶界交叉效果良好,陶瓷的孔隙率降低,综合电气性能优异PB(NB_(2/3)Zn_(1/3))_(0.03)(Zr_(52)Ti_(48)_(0.97)_(0.97)O_3样品。其最佳电性能如下:介电常数(ε)是1105,介电损耗(Tg)为0.017,机电耦合系数(K_P)为0.287,压电常数(D33)为150pc / n。

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