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Atomic Arrangement and Formation Mechanism of c-Axis Oriented ZnO Thin Films Grown on p-Si Substrates

机译:在P-Si基材上生长的C轴取向ZnO薄膜的原子布置和形成机理

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The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis orientation. The pole figure indicates that ZnO thin films have columnars with the grains of the [0002] crystallographic axis perpendicular to the Si (100) substrate, indicative of the random rotational orientations along the c-axis. Selected area electron diffraction pattern (SADP) of the ZnO/Si (100) heterostructures shows that the ZnO preferential oriented film is formed on the Si substrate. A possible atomic arrangement of the crystal structure and the formation mechanism of the c-axis orientated ZnO thin films grown on p-Si substrates are discussed on the basis of the XRD, the pole figure, and SADP results.
机译:在Si(100)衬底上生长的ZnO膜的X射线衍射(XRD)图案表明生长的ZnO膜具有强的C轴取向。极值表示ZnO薄膜具有柱状,其晶粒的晶粒晶粒垂直于Si(100)衬底,指示沿C轴的随机旋转取向。 ZnO / Si(100)异质结构的所选区域电子衍射图案(SADP)表明,在Si衬底上形成ZnO优先的膜。在P-Si基板上生长的晶体结构的可能原子布置和C轴取向ZnO薄膜的形成机构在XRD,极值图和SADP结果的基础上讨论。

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