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机译:在p-Si衬底上生长优先c轴取向ZnO薄膜的形成机理
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology;
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology;
Advanced Semiconductor Research Center Division of Electrical and Computer Engineering Hanyang University;
Nano Research Center Korea Institute of Science and Technology;
Nano Research Center Korea Institute of Science and Technology;
机译:p-Si衬底上生长的c轴取向ZnO薄膜的原子排列和形成机理
机译:镁掺杂水平和退火温度引起的高c轴取向ZnO:Mg薄膜和Al / ZnO:Mg / p-Si / Al异质结二极管的结构,光学和电学性质
机译:Mg掺杂水平和退火温度诱导高度C轴取向ZnO:Mg薄膜和Al / ZnO:Mg / P-Si / Al异质结二极管的结构,光学和电性能
机译:在P-Si基材上生长的C轴取向ZnO薄膜的原子布置和形成机理
机译:用于微波应用的C轴取向钡铁氧体薄膜/厚膜。
机译:C轴的体外溶解和力学行为优先取向脉冲激光沉积制造的羟基磷灰石薄膜
机译:p-si衬底上生长c轴取向ZnO薄膜的原子排列及形成机理