HexaTech Inc, 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560, USA;
HexaTech Inc, 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560, USA;
HexaTech Inc, 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560, USA;
HexaTech Inc, 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560, USA;
HexaTech Inc, 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560, USA;
Institut fuer Quantenmaterie/Gruppe Halbleiterphysik, Universitaet Ulm, Ulm 89069,Germany;
Institut fuer Quantenmaterie/Gruppe Halbleiterphysik, Universitaet Ulm, Ulm 89069,Germany;
Institut fuer Quantenmaterie/Gruppe Halbleiterphysik, Universitaet Ulm, Ulm 89069,Germany;
Department of Materials Science and Engineering, North Carolina State University,Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University,Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University,Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University,Raleigh, North Carolina 27695, USA;
机译:生长参数和AIN间隔层的厚度对在4英寸Si衬底上生长的AIGaN / AIN / GaN高电子迁移率晶体管的电性能的影响
机译:沉积在单晶AI2O3(0001)衬底上的AIN薄膜的结构表征
机译:磁控溅射在低温沉积的AIN衬底上外延生长ZnO薄膜
机译:基于AIGAN的设备的高品质AIN单晶基板
机译:在单晶碳化硅衬底上外延生长的六价铁酸钡薄膜的生长和高速率反应离子刻蚀。
机译:在全氧化物器件的钙钛矿衬底上外延生长高结晶尖晶石铁氧体薄膜
机译:温度依赖于6H-SIC结构外延生长的AIN膜的电学特性