;The invention also concerns a corresponding device as well as the corresponding single crystal products and their use, whereupon the basis for novel components based on layers or stacks of layers of aluminium gallium nitride, indium aluminium nitride or indium aluminium gallium nitride is generated."/>
公开/公告号US2018258551A1
专利类型
公开/公告日2018-09-13
原文格式PDF
申请/专利权人 FORSCHUNGSVERBUND BERLIN E.V.;
申请/专利号US201615761197
申请日2016-08-31
分类号C30B29/40;C30B23/06;H01L21/02;H01L29/20;H01L29/205;H01L33/32;H01L33;H01L33/06;H01L29/15;
国家 US
入库时间 2022-08-21 13:02:33