The Ferroelectric Characteristics of Ba(Zr_(0.1)Ti_(0.9))O_3 Thin Films under Post-Annealing Treatment for Applications in Nonvolatile Memory Devices

摘要

In this study, we investigated that of Al/Ba(Zr_(0.1)Ti_(0.9))O_3 (BZT)/Pt/Ti/SiO_2/Silicon metal-ferroelectric-metal-insulator-semiconductor (MFM) ferroelectric structures and found the memory effect and capacitance of annealed BZT films during the different annealing temperature. Additionally, the capacitance and leakage current density were about 4.3 nF and lx10~(-6) A/cm~2, respectively. From C-V curves, the ferroelectric properties and charges accumulation of annealed BZT films were also found during the annealing temperature of 700°C.