Electrical and Physical Characteristics of Ba(Zr_(0.1)Ti_(0.9))O_3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application

摘要

In this study, the effects of oxygen gas plasma on the surface treatment of Ba(Zr_(0.1)Ti_(0.9))O_3 (BZT) films are investigated. The influence of plasma on the structure is developed by using X-ray diffraction patterns and the electrical characteristics are developed by using the MIM and MFIS capacitor structure. Experiment results clearly indicate that the electrical characteristics of BZT film have improved effectively within oxygen plasma surface treatment.