Switching Properties of Ba(Zr_(0.1)Ti_(0.9))O_3 Ferroelectric Films Under Various Retention Cycles for Application in Nonvolatile Memory Devices

摘要

In this study, the BZT ferroelectric thin films were deposited on Pt/Ti/SiO_2/Si substrate under the RF magnetron sputtering parameters, and their electrical and ferroelectric characteristics were investigated. The MFM structure of Al/Ba(Zr_(0.1)Ti_(0.9)) O_3/Pt/Ti/SiO_2/Si was proposed in order to be applied as non-volatile ferroelectric random access memory devices applications. Additionally, the coercive field and saturation polarization of BZT films were found to be changed with the different elapsed time and switching cycle. Finally, the switching properties of BZT Films under various retention cycles were also discussed.