Simulation of microwave power characteristics of AlGaN/AlN/GaN HEMT

摘要

A systematic AlGaN/AlN/GaN HEMT physical based numerical model is established in this paper. This model includes field-dependent mobility, polarization effect, interface state, surface state, and traps. The model has been implemented into TCAD Silvaco. And the simulated DC and RF characterization fit the measured results well. The effects of source field plate on AlGaN/AlN/GaN HEMT breakdown voltage and DC drain current is also studied based on the established model. The off-state breakdown voltage was significantly improved by employing a source field plate. This is because the source field plate redistributes the electric fields in the gate-to-drain region.