Effect of Vacuum Annealing Temperature on Properties of Ga-doped ZnO Films Deposited by DC Magnetron Reactive Sputtering

摘要

The Ga-doped ZnO thin films (GZO) were deposited at room temperature by DC magnetron reactive sputtering. The influence of vacuum annealing temperature on the morphology, internal stress, optical and electrical properties were investigated. The results showed that with the rise of annealing temperature, the grain size increased, the preferred orientation and crystallization degree became better, the internal stress reduced, the resistivity firstly decreased slightly before 350°C and then increased sharply. The minimum resistivity of 1.32×10~(-3)Ω·cm was obtained at 350°C. The annealing temperature had a very big influence on the transmittance, and the average transmittance was about 80%.