LOW TEMPERATURE PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITYOF ZnSe_xTe_(1-x) TERNARY ALLOYS

摘要

We investigated Low-Temperature Photoluminescence (PL) spectra of ZnSe_xTe~(1-x) were grown from the melt where 0≤x≤0.202, the spectra of ZnSe_xTe_(1-x)showing a broad hand which may be attributed to self activated emission, The broad selfactivated (SA) emission hand have been assigned to various crystalline defects, such as dislocations and vacancies or theircombination with impurities . The room temperature photoelectric response spectra of ZnSe_xTe_(1-x)samples (0≤x≤1) weremeasured, a single band was observed in the band edge region which attributed to the generation of more number of free chargecarriers in the band gap region. The relaxation time was determined from studying the kinetics of photoconductivity.