Determination of Ge Fraction and Carrier Concentration in Si_(1-x)Ge_x/Si by Capacitance-voltage Method

摘要

The Ge mole fraction (x) of Si_(1-x)Ge_x layer was described by the C-V technique for Schottkey contact of single heterojunction Si_(1-x)Ge_x/Si, whose structure profile can be characterized by SEM image and EDS. Then the strained Si cap layer was grown on the Si_(1-x)Ge_x/Si, and C-V technique was used to determine the carrier concentration and structure of double heterojunction Si/Si_(1-x)Ge_x/Si. The change of the structure between Si_(1-x)Ge_x/Si and Si/ Si1-xGex/Si was also observed by this method.