Interfacial Reaction in Poly Si_(1-x)Ge_x/ZrO_2 with Ge Content in Poly Si_(1-x)Ge_x Films

摘要

The interfacial reaction between poly Si_(1-x)Ge_x(x=0, 0.2, 0.4) and ZrO_2 films after annealing was investigated to use ZrO_2 films as an alternative gate dielectric. In the poly Si/ZrO_2 structure, silicidation was the dominant reaction due to continuous formation of Zr-silicide and SiO during annealing. However, in poly Si_(1-x)Ge_x=0.2, 0.4)/ZrO_2, silicate formation was the main reaction after annealing at 900 deg C for 30 min. In addition, after annealing at 800 deg C, the silicate layer was observed only in the poly Si_(0.6)Ge_(0.4)/ZrO_2 system.