Effect of Sc Doping on Ferroelectric and Dielectric Properties of Bi_(0.9)La_(0.1)FeO_3 thin Film by Sol-Gel process

摘要

Pure Bi_(0.9)La_(0.1)Fe_(1-x)Sc_xO_3 (x = 0, 0.05, 0.10, 0.15, 0.20) (BLFSO) thin films were deposited on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The effect of Sc doping on the XRD, microstructure, dielectric and ferroelectric properties of BLFO films was studied. Compared to counterparts of Bi_(0.9)La_(0.1)FeO_3 (BLFO) film, the grain refinement of all films is obvious. When the value of Sc is 0.15, the double remanent polarization 2Pr is effectively enhanced with the extreme value of 17.7μC/cm~2. The dielectric constant exhibits a trends of increase firstly and then decrease with the increase amount of scandium level.