PERFORMANCE OF MOSFETs ON REACTIVE-ION-ETCHED GaN SURFACES

摘要

We have fabricated, characterized and compared the performance of lateral enhancement-mode GaN MOSFETs on as-grown and RIE-etched surfaces with 900 and 1000°C gate oxide annealing temperatures. Both subthreshold swing and field effect mobility show 1000°C is the optimal annealing temperature for the PECVD gate oxide in our MOSFET process.