首页> 外文会议>IEEE CPMT Symposium >Electroless Ni/Pd/Au plating for semiconductor package substrates-effect of gold plating combinations on gold wire bonding reliability
【24h】

Electroless Ni/Pd/Au plating for semiconductor package substrates-effect of gold plating combinations on gold wire bonding reliability

机译:用于半导体封装基板的化学镀Ni / Pd / Au电镀 - 金电镀组合对金线键合可靠性的影响

获取原文

摘要

In order to investigate the root causes of the good wire bonding reliability in electroless Ni/Pd/Au plating (ENEPIGEG), the wire bonding reliability of the combinations with electrolytic and electroless processes were evaluated. The reliability of ENEPIGEG and electrolytic Ni (SB-Watt)/IGEG were equivalent to that of the conventional electrolytic Ni (SB-Watt)/electrolytic Au and were excellent. The reliability of electrolytic Ni (SB-Watt)/IGEG was higher than that of EN/Electrolytic Au after heat treatment. We found that the grain size of the gold deposit coordinated with the grain size of the underplated Ni deposit with the epitaxial crystal growth. The large grain size of the gold deposit decreased the grain boundary of the gold deposit and reduced the grain boundary diffusion from the underplated metals onto the gold plating. We concluded that the wire bonding reliability after heat treatment depended on the diffusion behavior of the underplated metals and the grain size of the gold deposit.
机译:为了研究化学镜线镀Ni / Pd / Au电镀(Enepigeg)的良好引线键合可靠性的根本原因,评估了具有电解和无电过程的组合的引线键合可靠性。 Enepigeg和电解Ni(Sb-WATT)/ IgEG的可靠性等同于常规电解Ni(Sb-Watt)/电解Au的可靠性,并且是优异的。热处理后,电解Ni(Sb-Watt)/ IgEG的可靠性高于EN /电解Au的可靠性。我们发现,金沉积的晶粒尺寸与底层晶粒晶粒的晶粒尺寸与外延晶体生长相辅相成。金沉积物的大粒径降低了金沉积物的晶界,并将晶粒边界扩散从底漆的金属上降低到镀金上。我们得出结论,热处理后的线粘合可靠性依赖于填充金属的扩散行为和金沉积物的晶粒尺寸。

著录项

  • 来源
    《IEEE CPMT Symposium》|2010年||共4页
  • 会议地点
  • 作者

    {missing};

  • 作者单位
  • 会议组织
  • 原文格式 PDF
  • 正文语种
  • 中图分类 TN4-53;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号