Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO_2 interface

摘要

An alternative approach for reduction of interface traps density at 4H-SiC/SiO_2 interface is proposed. Silicon nitride/silicon oxide stack was deposited on p-type 4H-SiC (0001) epilayers and subsequently over-oxidized. The electrical characterization of the interface was done by employing metal-oxide semiconductor (MOS) devices, inversion-channel MOS devices and lateral MOS field effect transistors (MOSFETs).