首页> 外文会议>Materials Research Society Meeting >Temperature and Frequency Dependencies of Ferroelectric Properties in Rhombohedral Epitaxial Pb(Zr,Ti)O_3 Films with Perfect (111) Orientations Grown on CaF_2 Substrates
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Temperature and Frequency Dependencies of Ferroelectric Properties in Rhombohedral Epitaxial Pb(Zr,Ti)O_3 Films with Perfect (111) Orientations Grown on CaF_2 Substrates

机译:菱形外延PB(Zr,Ti)O_3薄膜中铁电特性的温度和频率依赖性,具有完美(111)取向在CAF_2基板上生长

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Perfectly (111)-oriented rhombohedral Pb(Zr, Ti)O_3 [PZT] films were successfully grown on (111) CaF2 substrates. These films have the polar-axis perpendicular to the substrate surface without non-180° domains. Well saturated polarization (P) -electric field (E) hysteresis loops were observed at various frequencies and temperatures. Temperature dependence of the saturation polarization (Psat) was in good agreement with the estimated one by Haun et al using phenomenological approach but did not strongly depend on the measured frequencies. On the other hand, the coercive field (E_c) increased with decreasing temperature and with increasing the measurement frequency.
机译:完美(111) - 成功生长在(111)CAF2基材上成功生长了(111)的rhombohedral Pb(Zr,Ti)O_3 [PZT]薄膜。这些膜的偏振轴垂直于基板表面而没有非180°结构。在各种频率和温度下观察到饱和偏振(P)电磁场(E)滞后环。饱和偏振(PSAT)的温度依赖性与Haun等人使用现象学方法估计,但没有强烈取决于测量的频率。另一方面,矫顽场(E_C)随着温度的降低和增加测量频率而增加。

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