Influence Of The Substrate On Ferroelectric Properties Of <111> Oriented Rhombohedral Pb(zr_(0.6)ti_(0.4))o_3 Thin Films

摘要

<111>-oriented Pb(Zr_(0.6)Ti_(0.4))O_3 thin films were elaborated in the same run by RF multitarget sputtering on Si/SiO_2/TiO_2/Pt(111)and LaA1O_3/Pt<111> substrates. PZT thin films were textured, exhibiting <111> fibre texture on silicon substrates whereas epitaxial relationships were found when grown on LaAlO_3/ Pt(111). On the latter substrate, values of spontaneous polarization and of dielectric permittivity were measured close to that calculated previously along the <111> direction of PZT rhombohedral single crystal. On the contrary, spontaneous polarization and dielectric permittivity measured on PZT thin films deposited on platinized silicon were found deviating from calculated values. These different electrical results are attributed to different ferroelectric domain configurations.