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Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM
Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM
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机译:用于低压操作铁电RAM的PbZr1-xTixO3薄膜的定向菱面体成分
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摘要
A means to minimize physical distortion and modifications in the electrical properties of ferroelectric films incorporated into semiconductor devices is proposed. By introducing crystallographic texture into these ferroelectric films, the piezoelectric coefficient of the material can be minimized, reducing the interaction between a voltage across and mechanical stress on the film. In addition to having low piezoelectric coefficients, rhombohedral lead zirconate titanate films oriented along (111) exhibit low coercive fields and high remnant polarization, increasing their usefulness in layered semiconductor devices.
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