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Oriented rhombohedral composition of PbZr1-xTix03 thin films for low voltage operation ferroelectric ram
Oriented rhombohedral composition of PbZr1-xTix03 thin films for low voltage operation ferroelectric ram
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机译:低压操作铁电体PbZr1-xTix03薄膜的定向菱面体成分
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摘要
A means to minimize volume changes and modifications in the electrical properties of ferroelectric films incorporated into semiconductor devices is proposed. By introducing crystallographic texture into these ferroelectric films, the piezoelectric coefficient of the material can be minimized and the electromechanical stresses decoupled. In addition to having low piezoelectric coefficients, rhombohedral lead zirconate titanate films oriented along (111) exhibit low coercive fields and high remnant polarization, increasing their usefulness in layered semiconductor devices.
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