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Control of crystal phase in Fe/Si films by using thin film Zone Melting Crystallization

机译:用薄膜区熔化结晶控制Fe / Si膜中的晶相控制

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摘要

For the development of a new solar cell material, β-iron silicide (β-FeSi_2) films were fabricated by using the following two techniques involving the thin film Zone Melting Crystallization (ZMC) method. First, β-FeSi_2 was formed by post-annealing ZMC films composed of α-FeSi_2. The phase transition from α -FeSi_2 to β-FeSi_2 was induced by the post-annealing and promoted with Cu. Second, β-FeSi_2 was directly formed from the melt without post-annealing by adjusting the power of upper and lower heaters in the ZMC. Results showed that (1) crystal phase of the Fe/Si films could be controlled by adjusting the power of each heater in the ZMC, (2) Cu promoted formation of β-FeSi_2 from amorphous in addition to promoting phase transition from α-FeSi_2 to β-FeSi_2, and (3) crystal phase of ZMC films depended on the dispersion of Cu in the films.
机译:为了开发新的太阳能电池材料,通过使用以下两种涉及薄膜区熔化结晶(ZMC)方法的两种技术制造β-铁硅化物(β-FESI_2)膜。首先,通过由α-Fesi_2组成的退火后退火的ZMC膜形成β-Fesi_2。由α-Fesi_2至β-Fesi_2的相转变由后退火诱导并用Cu促进。其次,通过调节ZMC中的上加热器的功率,从熔体直接由熔体直接形成β-Fesi_2。结果表明,通过调节ZMC中的每次加热器的功率,(2)Cu在从α-Fesi_2的促进相转变之外调节ZMC中的每个加热器的功率,可以控制Fe / Si膜的晶相。除了从α-Fesi_2的促进相转变之外,可以通过调节ZMC中的每个加热器的功率来控制β-FeSi_2对于β-FeSi_2和(3)ZMC膜的晶相依赖于Cu在膜中的分散体。

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