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首页> 外文期刊>ACS applied materials & interfaces >Controlled Directional Crystallization of Oligothiophenes Using Zone Annealing of Preseeded Thin Films
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Controlled Directional Crystallization of Oligothiophenes Using Zone Annealing of Preseeded Thin Films

机译:使用预播薄膜的区域退火控制寡噻吩的定向结晶

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We demonstrate a simple route to directionally grow crystals of oligothiophenes, based on 2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene with degrees of polymerization of 2 (BTTT-2) and 4 (BTTT-4) via zone annealing (ZA) of preseeded films. ZA of spun-cast films of BTTT-2 does not yield highly aligned crystals. However, if the film is oven-annealed briefly prior to ZA, highly aligned crystals that are millimeters in length can be grown, whose length depends on the velocity of the ZA front. The precrystallized region provides existing nuclei that promote crystal growth and limit nucleation of new crystals in the melted region. Aligned crystals of BTTT-2 can be obtained even when the moving velocity for ZA is an order of magnitude greater than the crystal growth rate. The relative nucleation rate to the crystallization rate for BTTT-4 is greater than that for BTTT-2, which decreases the length over which BTTT-4 can be aligned to similar to 500 mu m for the conditions examined. The temperature gradient and moving velocity of ZA enable control of the length of the aligned crystalline structure at the macroscale.
机译:我们展示了一种基于2,5-双(3-烷基噻吩-2-基)噻吩并[3,2-b]噻吩的聚合度为2(BTTT-2)和4的定向生长寡聚噻吩晶体的简单方法(BTTT-4)通过预播膜的区域退火(ZA)。 BTTT-2的流延膜的ZA不能产生高度对齐的晶体。但是,如果在ZA之前对膜进行短暂的烤箱退火,则可以生长长度为毫米的高度对齐的晶体,其长度取决于ZA前沿的速度。预结晶的区域提供了现有的原子核,可促进晶体生长并限制熔化区域中新晶体的成核。即使ZA的移动速度比晶体生长速率大一个数量级,也可以获得BTTT-2的取向晶体。 BTTT-4的相对成核速率与结晶速率的比大于BTTT-2的相对成核速率,这使BTTT-4可以对准的长度缩短到在所检查的条件下接近500微米。 ZA的温度梯度和移动速度使得能够在宏观尺度上控制排列的晶体结构的长度。

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