Designing and characterization of 60nm p-well MOSFET using Sentaurus TCAD Software

摘要

A 60nm p-well MOSFET device was designed and characterized based on 90nm recipe using Sentaurus TCAD Software. In this project, there are two major simulations done using Sentaurus Process and Sentaurus Device. Sentaurus Process is a simulator for semiconductor manufacturing process. While Sentaurus Device work as a device simulator to obtain electrical characteristic. The simulations results are viewed in two dimensions (2D) using INSPECT and TECPLOT SV tools. The threshold voltages (Vth) for NMOS and PMOS of 60nm are 0.210889V and −0.182V, the drain saturation current (Idsat) are 9.575e–04A and 1.439e–03A with the leakage current (Ioff) are 2.623e–05A and 2.601e–07A. The simulation results are almost identical with the theoretical.