Self-aligned In_(0.53)Ga_(0.47)As MOSFETs with Atomic Layer Deposited Al_2O_3, ZrO_2, and Stacked Al_2O_3/ZrO_2 Gate Dielectrics

摘要

The scaling characteristics of self-aligned In_(0.53)Ga_(0.47)As n-MOSFETs with atomic layer deposited (ALD) Al_2O_3 and ZrO_2 gate dielectrics are evaluated. Although ZrO_2 shows promise of scalability to lower capacitance equivalent thickness (CET) compared to Al_2O_3, stacked bilayer Al_2O_3/ZrO_2 gate dielectric enables further improvement in subthreshold swing and transconductance than single ZrO_2 film. In addition, the bilayer design also shows further scalability with merely 5 A Al_2O_3 while improving the MOSFETs performance.