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A 10ppm/°C 1.8V Piecewise Curvature-corrected Bandgap Reference in 0.5μm CMOS

机译:10ppm /°C 1.8V分段曲率校正的带隙参考0.5μmcmos

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A piecewise curvature-corrected bandgap reference (BGR) is presented. It features in utilizing a piecewise curvature-corrected current generator and an operational amplifier biased by a current proportional to absolute temperature (PTAT) to a conventional first order BGR. The piecewise current corrects the nonlinear temperature term of the first-order BGR in the higher temperature range (TR). The PTAT biased current compensates the trans-conductance degradation of the operational amplifier with temperature. Measured result shows that the proposed BGR achieves temperature coefficient of 10ppm/°C in the TR of 10-125°C, line regulation of 1.8mV/V in the supply range of 1.7-4.0V, power supply rejection(PSR) of -48dB. It is fabricated in CSMC0.5μm mixed signal CMOS process with chip area of 400×300μm and power consumption of 48μW.
机译:提出了分段曲率校正的带隙参考(BGR)。它在利用分段曲率校正的电流发生器和由与绝对温度(PTAT)成比例的电流偏置的运算放大器的特征在于传统的第一订单BGR。分段电流校正一阶BGR在较高温度范围(TR)中的非线性温度术语。 PTAT偏置电流通过温度补偿了运算放大器的跨导劣化。测量结果表明,所提出的BGR在10-125°C的TR中实现了10ppm /°C的温度系数,在1.7-4.0V,电源抑制(PSR)的供电范围内为1.8mV / v。 48db。它在CSMC0.5μm混合信号CMOS工艺中制造,芯片面积为400×300μm,功耗为48μW。

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