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CURVATURE-CORRECTED BANDGAP REFERENCE

机译:曲率校正带隙参考

摘要

A curvature-corrected bandgap reference comprising a first BJT device operating at a first current density that is substantially proportional to absolute temperature, the first BJT device having a first base-emitter voltage and a first base terminal and a second BJT device operating at a second current density that is substantially independent of temperature, the second BJT device having a second base-emitter voltage and a second base terminal. The first and second base terminals operate at a reference voltage. The reference voltage comprises a linear combination of the first and second base-emitter voltages and is thereby made substantially independent of temperature and curvature-corrected. The linear combination is provided by summing the first base-emitter voltage, a proportional to absolute temperature (PTAT) voltage proportional to a first current density, and a curvature-correction voltage proportional to a difference between the first and second base-emitter voltages.
机译:一种曲率校正的带隙基准,包括在基本与绝对温度成正比的第一电流密度下工作的第一BJT器件,该第一BJT设备具有第一基极-发射极电压和第一基极端子,以及在第二BJT设备上以第二基极工作电流密度基本上与温度无关,第二BJT器件具有第二基极-发射极电压和第二基极端子。第一和第二基极端子在参考电压下操作。基准电压包括第一基极-第二基极-发射极电压的线性组合,从而使基准电压基本独立于温度和曲率校正。通过将第一基极-发射极电压,与绝对温度(PTAT)成正比的电压与第一电流密度成正比,以及与第一基极-第二发射极电压之间的差成正比的曲率校正电压相加来提供线性组合。

著录项

  • 公开/公告号US2015338872A1

    专利类型

  • 公开/公告日2015-11-26

    原文格式PDF

  • 申请/专利权人 INVENSENSE INC.;

    申请/专利号US201514817126

  • 发明设计人 NAUMAN AFZAL;

    申请日2015-08-03

  • 分类号G05F3/02;

  • 国家 US

  • 入库时间 2022-08-21 14:35:23

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