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Design of Bandgap Reference in Switching Power Supply

机译:开关电源中的带隙基准设计

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摘要

A bandgap voltage reference is designed to meet the requirements of low power loss,low temperature coefficient and high power source rejection ratio(PSRR) in the intergrated circuit.Based on the analysis of conventional bandgap reference circuit,and combined with the integral performance of IC,the specific design index of the bandgap reference is put forward.In the meantime,the circuit and the layout are designed with Chartered 0.35 μm dual gate CMOS process.The simulation result shows that the coefficient is less than 30ppm/℃ with the temperature from -50℃ to 150℃. The bandgap reference has the characteristics of low power and high PSRR.
机译:设计了一种带隙基准电压源,以满足集成电路中低功耗,低温度系数和高电源抑制比(PSRR)的要求。在分析常规带隙基准电路的基础上,结合集成电路的整体性能在此基础上,提出了带隙基准的具体设计指标。同时,采用Chartered 0.35μm双栅CMOS工艺设计了电路和布局。仿真结果表明,随着温度的升高,该系数小于30ppm /℃。 -50℃至150℃。带隙基准具有低功率和高PSRR的特性。

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  • 来源
    《半导体光子学与技术(英文版)》 |2009年第2期|101-104129|共5页
  • 作者单位

    School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,CHN;

    School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,CHN;

    School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,CHN;

    School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,CHN;

    School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,CHN;

  • 收录信息 中国科学引文数据库(CSCD);
  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 静电场计算方法;
  • 关键词

  • 入库时间 2022-08-19 03:40:57
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