Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric

摘要

In this work, the effects of fluorine incorporation by using plasma on the electrical properties of Si MOS capacitor with La2O3 gate dielectric are investigated. From the capacitance-voltage (C-V) curve and gate leakage current, it is demonstrated that the F-plasma treatment can effectively suppress the growth of interfacial layer, and thus improve the electrical properties of the device in terms of accumulation capacitance, interface-state density and breakdown voltage.