Evaluation of quasi-ballistic transport in nano-MOSFETs by deterministic solver of the time dependent multi-subbands Boltzmann Transport Equation

摘要

In this paper, the ballistic and quasi-ballistic transport characteristics of Sub-30 nm double gate MOSFETs are simulated by deterministic solver of the Time Dependent Muti-subbands Boltzmann Transport Equation [1]. The scattering effect on the Sub-30 nm double gate MOSFETs is investigated not only through analyzing ON current, but also the source to channel barrier height, average electron velocity and electron density at virtual source (VS: top of the barrier).