A Novel Gate Boosting Circuit for 2-Phase High Voltage CMOS Charge Pump

摘要

A novel gate boosting circuit is proposed for general switched-capacitor charge pump. The proposed circuit only requires two small transistors to generate the necessary driving signal from a clock signal that swings between 0V to V_(DD) for closing and opening the charge transfer switches in the charge pump. As a result, the proposed gate boosting circuit reduces the design complexity and silicon area. Moreover, the regular structure eases the layout and increases the reliability of the implemented charge pump. A 3× Makowski charge pump implemented by the proposed gate boosting element is simulated. An output voltage closed to the ideal one shows that the proposed gate boosting circuit is suitable to be used in designing high efficiency charge pumps.