A new kind of transfer molded package for low voltage semiconductor power modules is presented. It consists of a leadframe with power MOSFET's and other components soldered to it and it is housed using the transfer molding process. The main advantage of this new kind of package is that the lead-frame is handled as a single part, even though different electrically isolated leadframe areas are pro-vided in the package. The main features are discussed in this paper showing calculations as well as measurement results. The application of different thermal interface materials (TIM) is discussed and an outlook on isolation means for higher voltages is given.
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