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Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods

机译：使用独特铟 - 氧化铟锡纳米杆GaN / IngaN垂直喷射发光二极管效率提高

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Distinctive indium-tin-oxide nanorods are demonstrated using glancing-angle deposition. The nanostructured material exhibit enhanced transmission and is employed to enhance the light-output-power of GaN/InGaN vertical-injection light emitting diodes by 20% at an injection current of 350mA.

机译：使用透明角沉积证明了独特的铟锡氧化物纳米棒。纳米结构材料表现出增强的变速器，并且用于在350mA的喷射电流下提高GaN / IngaN垂直喷射发光二极管的光输出功率20％。

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《Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference 》|2009年||共2页
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C. S. Yang; Peichen Yu; C. H. Chiu; C. H. Chang; H. C. Kuo;
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1. High Extraction Efficiency of GaN-Based Vertical-Injection Light-Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorod by Glancing-Angle Deposition [J] . Min-An Tsai, Hsun-Wen Wang, Peichen Yu, Japanese journal of applied physics . 2011 ,第5Issue1期

机译：独特的铟锡氧化物纳米棒通过掠角沉积技术对GaN基垂直注入发光二极管的高提取效率
2. Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO2 nanomasks [J] . Lin Da-Wei, Lee Chia-Yu, Liu Che-Yu, Applied Physics Letters . 2012 ,第23期

机译：具有SiO2纳米掩模的GaN纳米棒模板上的绿色InGaN / GaN发光二极管的效率和下垂改善
3. Efficiency and droop improvement in green InGaN/GaN light-emitting diodes on GaN nanorods template with SiO_2 nanomasks [J] . Da-Wei Lin, Chia-Yu Lee, Che-Yu Liu, Applied Physics Letters . 2012 ,第23期

机译：具有SiO_2纳米掩模的GaN纳米棒模板上的绿色InGaN / GaN发光二极管的效率和下垂改善
4. Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods [C] . C. S. Yang, Peichen Yu, C. H. Chiu, Conference on Lasers and Electro-Optics Quantum Electronics and Laser Science Conference . 2009

机译：使用独特铟 - 氧化铟锡纳米杆GaN / IngaN垂直喷射发光二极管效率提高
5. Quantum efficiency enhancement for GaN based light-emitting diodes and vertical cavity surface-emitting lasers. [D] . Zhang, Fan. 2014

机译：GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
6. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes [O] . Po-Hsun Lei, Po-Chun Yang, Po-Chun Huang 2021

机译：聚苯乙烯纳米光学光刻法制备的光子晶体结构P-GAN纳米棒的研究提高了INGAN / GAN绿色发光二极管光提取效率
7. On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping [O] . Shaofei Zhang, Yukun Li, Saeed Fathololoumi, 2013

机译：关于光泵浦下自顶向下蚀刻的InGaN / GaN纳米棒发光二极管的效率下降

Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods

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