High Performance Schottky Barrier MOSFETs on UTB SOI

摘要

This paper presents fully-depleted short-channel Schottky barrier (SB) MOSFETs with silicidation induced dopant segregation of B at a low temperature of 450°C. The integration of nickel silicide combined with either As or B segregation significantly improves the switching performance of dopant-free SB-MOSFETs. The implantation dose dependence of the device characteristics is studied on long channel p- and n-type SB-MOSFETs. An enhanced device performance with higher on-currents and a strong suppression of the ambipolar behaviour, which is typical for SB-MOSFETs, is observed with increasing implantation dose. Short channel p-type SB-MOSFETs with a channel length of 80 nm show an on-current of 525 μA/μm at an I_(on)/I_(off)-ratio of 10~4, becoming competetive with state-of-the-art SB-MOSFETs.