Electrical Characteristics of Atomic Layer Deposited Aluminium Oxide and Lanthanum-Zirconium Oxide High-k Dielectric Stacks

摘要

We present a study on the electrical characteristics of Al_2O_3 and La_xAl_yO_z High-k Dielectric stacks on p-type silicon-, and n-type germanium substrates. Atomic layer deposition is used to fabricate ultra-thin oxide layers and laminates in the few-nm range at process temperatures of 250°C. By means of metal gate/high-k oxide/semiconductor capacitors we evaluate these material systems regarding their capacitance-voltage and current-voltage characteristics.