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Design Considerations for Undoped FinFETs Based on a 3D Compact Model for the Potential Barrier

机译:基于潜在屏障3D紧凑型模型的未掺杂FinFET的设计考虑因素

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摘要

From an analytical model for the potential barrier in undoped FinFETs geometry constraints for the DIBL effect are derived. Furthermore, the influence of corner effects on the transconductance of the drain current are investigated. These effects are analyzed by numerical results and by definition of a simple current equation which is based on the analytical model.
机译:从未掺杂的FinFET潜在屏障的分析模型导出了DIBL效应的几何约束。此外,研究了角效应对漏极电流跨导的影响。通过数值结果分析这些效果,并通过基于分析模型的简单电流等式的定义来分析。

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