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Virtual Prototyping for PPM-level Failures in Microelectronic Packages

机译:微电子包中PPM级故障的虚拟原型设计

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摘要

In this paper, the interaction between chip and package is investigated with the focus on low ppm-level failures. More specifically, the failure mode of inter-metal shorts is investigated, caused by either electrical discharges (ESD) or internal/external mechanical forces. It is demonstrated that forces induced by the filler particles in the molding compound can cause these shorts. Finite element simulations are performed in order to estimate the stress levels in the backend stack of the integrated circuit (IC). Nano-indentation experiments are performed to measure the hardness of different passivation materials. The simulation and indentation results are combined with estimations and measurements of the particle size distribution, flow modeling and statistical methods. As such, the ppm-level of the failures could be attributed to the low chance that a filler particle would land on the critical location. Measures to prevent these failures are to be found in the area of improved passivation materials and/or recipes in combination with other molding compounds. For successful development of IC backend structures and processes, it is essential to take into account the influence of the package in the earlier phase of IC backend development.
机译:在本文中,研究了芯片和包装之间的相互作用,重点是低ppm级故障。更具体地,通过电放电(ESD)或内部/外部机械力来研究金属间短路的失效模式。结果表明,由填料颗粒在模塑化合物中诱导的力可导致这些短路。执行有限元模拟,以估计集成电路(IC)的后端堆栈中的应力水平。进行纳米压痕实验以测量不同钝化材料的硬度。仿真和压痕结果与粒度分布,流量建模和统计方法的估计和测量相结合。因此,故障的PPM级可能归因于填充粒子将降落在关键位置的低机会。防止这些故障的措施将在改进的钝化材料和/或配方与其他模塑化合物组合中找到。为了成功地发展IC后端结构和流程,必须考虑到包装在IC后端开发的早期阶段的影响。

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