CONTROLLED POLARISATION OF SILICON ISOLATED DOUBLE QUANTUM DOTS WITH REMOTE CHARGE SENSING FOR QUBIT USE

摘要

Nanometre scale quantum dot devices in silicon consisting of a single electron transistor and an isolated double quantum dot with multiple control gates have been fabricated. The polarisation of the double dot when biased with the control gates has been observed indirectly through its effect on the conduction in the single electron transistor. Simulation has confirmed the experimental results and aided in determining the mechanism of this effect. This work demonstrates the possibility of using the isolated double quantum dot as a charge qubit.