The Influence of Geometrical Structure ofA1InGaN Double Quantum Well (DQWs) UVDiode Laser on Its Performance and OperatingParameters

摘要

The development of efficient MQWs active regions of quaternary InAIGaN in the ultraviolet (UV) region is an engaging challenge by itself. Demonstrating lasers at such low wavelength will require resolving a number of materials, growth and device design issues. However, the quaternary AIInGaN represents a more versatile material since the bandgap and lattice constant can be independently varied. We report a quaternary AIInGaN double-quantum wells (DQWs) UV laser diode (LDs) study by using the simulation program of Integrated System Engineering-Technical Computer Aided Design (ISE TOAD). Advanced physical models of semiconductor properties were used. In this paper, the enhancement in the performance of AlInGaN laser diode can be achieved by optimizing the laser structure geometry design. The AIInGaN laser diodes operating parameters such as internal quantum efficiency n_i, ,internal loss a_i, and transparency threshold current density show effective improvements that contribute to a better performance.