Optical and Material Characteristics of InAs/GaAs Quantum Dots

摘要

A series of self-organized InAs/GaAs quantum dots with spacer layer under different thermal-treat(annealing) temperature and environments were prepared by molecular beam epitaxy. They were investigatedby atomic force microscope and temperature-dependent photoluminescence (PL). Results showed that thesample annealed at lower temperature has lager size quantum dots and smaller density of quantum dots. Thesize of quantum dots is getting smaller and the density of quantum dots is getting larger as the annealingtemperature increase. Two broad PL peaks are attributed to the combined size distribution of the bimodalquantum dots.