Impurity-free vacancy disordering of quantum heterostructures withSiOxNy encapsulants deposited by magnetron sputtering

摘要

Post-growth techniques such as impurity-free vacancy disordering (IFVD) are simple and effective avenues tomonolithic integration of optoelectonic components. Sputter deposition of encapsulant films can enhance quantum wellintermixing through IFVD and an additional mechanism involving surface damage during the sputtering process. In thisstudy, these two mechanisms were compared in a multi-quantum well structure. The compositions of different siliconoxy-nitride films were controlled by sputter deposition in different ambient gases. These different encapsulants wereused to initiate IFVD in the same heterostructure and the observed intermixing is compared to the film properties.