Compact and Efficient Monte Carlo Method to Reproduce Size Effect on Resistivity in Sub-0.1μm Metallic Interconnects

摘要

We present a compact and efficient Monte Carlo method to reproduce a size effect on resistivity in sub-0.1μm metallic interconnects. Implementation of our method is easy and our method is also not CPU-intensive thanks to its compactness and simplicity. In our method, the geometric effect of the size effect can be taken into account since surface scattering and grain boundary scattering, which are causes of the size effect on resistivity, are treated as real space interaction. We found that in rectangular metallic wires, mean free path of electrons around the corners of wires decreases owing to multiple surface scatterings and drift velocity around the corners is degraded. In very narrow and thin wires, this velocity degradation due to multiple surface scatterings is dominant and enhances the size effect of resistivity.