Preparation and Characterization of Multi-Walled Carbon Nanotubes Grown on Porous Silicon Substrate by Thermal-CVD

摘要

Porous Silicon (PSi) is emerging materials in semiconductor and nanotechnology applications nowadays as it has versatile and great potential of properties. In this paper we illustrate the simple electrochemical etching method to form the PSi and further used as a substrate to grow multi-walled carbon nanotubes (MWCNTs) by thermal chemical vapor deposition (Thermal-CVD) method. Besides, PSi as a substrate is sufficient and strong as it extremely superior to polished surface in facilitating the nucleation of catalyst. The result shows that the MWCNTs arrays on the PSi substrate is uniformly distributed and have good optical properties which was confirmed by Field Emission Scanning Electron Microscope (FE-SEM) and Photoluminescence (PL) Spectroscopy at room temperature (RT). Fourier Transform Infrared Spectroscopy (FTIR) shows a typical PSi result and confirmed the existing of CNTs compound.