Electromigration of 300 inn Diameter Sn-3.0Ag-0.5Cu Lead-Free Bumps in Flip Chip Package

摘要

The electromigration (EM) behavior of 300 gm Sn-3.0Ag0.5Cu solder bumps on Au/Ni-P substrate metallization in flip chip package was investigated at 150 °C with a current density of 5x10 ~3A/cm ~2. After reflowing for three times, the massive spalling of original intermetallic compound (IMC) of (Cu,Ni)6Sn3 was observed on the chip side. After aging and EM at 150 °C for 200 h, the initial intermetallic (Cu,Ni)6Sn5 at both interfaces transformed into (Ni,Cu)~3Sn_4. After aging at 150 °C for 200 h, the binary compound AuSn_4 in'solder turned into ternary compound (Au,Ni)Sn_4 and formed at the both interfaces. However, after EM at 150 °C for 200 h, the (Au,NO)Sn_4 was observed only at the anode interface but not at the cathode interface. When the electron flowed from the printed circuit board (PCB) substrate side to the chip side, a selective depletion of the Ni-P layer occurred- on the PCB substrate side (cathode) after EM for 200 h, leaving the Ni3P phase with a large number of columnar voids. After EM for 400 h, the damage of Ni-P layer spread over the entire cathode interface. When the electron flowed from the chip side to the PCB substrate side, the voids formed at the interface between solder and IMC layer, and the dissolution of Ni UBM and Cu pad occurred at the higher current density regions after EM for 400 h. Thermal electriaTfinite element simulation for the flip chip test vehicle showed that the current crowding occurred at the contacts between the solder bump and the Cu trace, and serious Joule heating was generated in the solder bump. It is shown that the simulative results agreed with the experimental results.